Volume : II, Issue : XII, December - 2013

Analysis of the Effect of Temperature and Power Dissipation Variations in SRAM Cells

V. Saminathan, Dr. K. Paramasivam

Abstract :

With the increment of mobile, biomedical and space applications, digital systems with low-power consumption are required. As a main part in digital systems, low-power memories are especially desired. Reducing the power supply voltages to sub-threshold region is one of the effective approaches for ultra-low-power applications. The on-chip caches can reduce the speed gap between the processor and main memory. These on-chip caches are usually implemented using SRAM cells. In SRAM cell stand by leakage power has become a major issue in modern low power faication with technology scaling and for high temperature operations. Our paper has emphasized on power dissipation variations in 6T, 9T and ST10T SRAM cells. Here the effect of power dissipations is observed on various temperatures at different supply voltages. It is observed that in our proposed system the power dissipation goes from 0.007mw to 0.019mw for 270 C to 1270 C respectively and it is less compared to 6T, 9T and ST10T SRAM Cells.

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Article: Download PDF   DOI : 10.36106/ijsr  

Cite This Article:

V.Saminathan, Dr.K.Paramasivam Analysis of the Effect of Temperature and Power Dissipation Variations in SRAM Cells International Journal of Scientific Research, Vol.II, Issue.XII December 2013

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