Volume : III, Issue : X, October - 2013

Structural and Electrical Properties of Thermally Evaporated SnxSe1–x Thin Films

Bushra A. Hasan, Ghuson H. Mohamed, Amer A. Ramadhan

Abstract :

Tin Selenide SnxSe1–x thin films were prepared from the alloy compound material by thermal evaporation method, to study the effect of tin content (x=0.1 ,0.5, and 0.7)and on its structural, and electrical properties. Thin films SnxSe1–x thicknesses of 300 nm, were grown on glass substrate held at room temperature. X–ray diffraction, D.C conductivity , and Hall effect measurements, were used to characterize the thin films. The XRD studies reveal that Sn0.5Se0.5 and Sn0.7Se0.3 films are crystalline with orthorhombic structure. while Sn0.1Se0.9 films were crystalline with hexagonal structure. Microstructure parameters such as crystallite size, and dislocation density were calculated and found to depend upon deposition parameters. The plot of conductivity with reciprocal temperature suggests, there are two activation energies Ea1 and Ea2 for SnxSe1–x for all x content values transport to one activation energy Ea1 at high tin content which decreases with increasing tin content .Hall Effect measurements showed that the SnxSe1–x thin films were n –type semiconductors at x=0.1 convert to p–type semiconductors at x=0.5 and 0.7

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Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

Bushra A. Hasan, Ghuson H. Mohamed, Amer A.Ramadhan / Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films / Indian Journal of Applied Research, Vol.3, Issue.10 October 2013

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