Volume : IX, Issue : III, March - 2019

An Ultra-low power LNA for UWB Receivers using 90nm CMOS technology

Mrs. G. M. Anitha Priyadarshini, Dr. G. A. E. Sathish Kumar

Abstract :

In this paper, An ultra–low–power low noise amplifier (LNA) for ultra–wideband (UWB) receivers is proposed. The configuration doubles the effective gm of the input transistor is the differential inductor feedback structure along with the neutralizing capacitor. In this design, the input device is biased to operate in moderate inversion region to achieve microwatt power dissipation. Experime`ntal results indicate a power dissipation of 70uW, a noise–figure and a forward gain of 18dB. The circuit is designed by using CMOS 90nm process and was powered up using a supply voltage of 1V and also compared with a conventional LNA i.e. without DTMOS. Experimental results show that the proposed LNA exhibits low power consumptions, higher gain, and better linearity.

Keywords :

Article: Download PDF   DOI : 10.36106/ijar  

Cite This Article:

AN ULTRA-LOW POWER LNA FOR UWB RECEIVERS USING 90NM CMOS TECHNOLOGY, Mrs. G.M. Anitha Priyadarshini, Dr.G.A.E. Sathish Kumar INDIAN JOURNAL OF APPLIED RESEARCH : Volume-9 | Issue-3 | March-2019

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