Volume : VIII, Issue : VIII, August - 2019

Study Optoelectronic Properties of Ag2O Hetero-junction Prepared by PLD

M. S. M. Jawad

Abstract :

Highly (101)-oriented p-Ag2O thin film with high electrical resistivity was grown by pulse laser deposition on clean mono-crystalline p-type Si without any post-deposition annealing. From optical transmittance and absorbance data, the direct optical band gap was found to be 1.4eV. The electrical and photovoltaic properties of Ag2O/Si isotope hetero-junction were examined in the absence of any buffer layer. Ideality factor of hetero-junction was found to be 3.9. Photo-response result revealed that there are two peaks located at 750 nm and 900nm

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Article: Download PDF    DOI : https://www.doi.org/10.36106/gjra  

Cite This Article:

STUDY OPTOELECTRONIC PROPERTIES OF AG2O HETERO-JUNCTION PREPARED BY PLD , M. S. M. Jawad GLOBAL JOURNAL FOR RESEARCH ANALYSIS : Volume-8 | Issue-8 | August-2019

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